www.irf.com 1 2/7/01 irfr3711 irfu3711 smps mosfet hexfet ? power mosfet v dss r ds(on) max i d 20v 6.5m w 110a ? notes ? through ? are on page 10 d-pak i-pak irfr3711 irfu3711 absolute maximum ratings symbol parameter max. units v ds drain-source voltage 20 v v gs gate-to-source voltage 20 v i d @ t c = 25c continuous drain current, v gs @ 10v 110 ? i d @ t c = 100c continuous drain current, v gs @ 10v 69 ? a i dm pulsed drain current ? 440 p d @t a = 25c maximum power dissipation ? 2.5 w p d @t c = 25c maximum power dissipation 120 w linear derating factor 0. 96 mw/c t j , t stg junction and storage temperature range -55 to + 150 c parameter typ. max. units r q jc junction-to-case CCC 1.04 r q ja junction-to-ambient (pcb mount) ? CCC 50 c/w r q ja junction-to-ambient CCC 110 thermal resistance applications benefits l ultra-low gate impedance l very low rds(on) at 4.5v v gs l fully characterized avalanche voltage and current l high frequency isolated dc-dc converters with synchronous rectification for telecom and industrial use l high frequency buck converters for server processor power synchronous fet l optimized for synchronous buck converters including capacitive induced turn-on immunity pd- 94061
irfr/u3711 2 www.irf.com symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. CCC 0.88 1.3 v t j = 25c, i s = 30a, v gs = 0v ? CCC 0.82 CCC t j = 125c, i s = 30a, v gs = 0v ? t rr reverse recovery time CCC 50 75 ns t j = 25c, i f = 16a, v r =10v q rr reverse recovery charge CCC 61 92 nc di/dt = 100a/s ? t rr reverse recovery time CCC 48 72 ns t j = 125c, i f = 16a, v r =10v q rr reverse recovery charge CCC 65 98 nc di/dt = 100a/s ? dynamic @ t j = 25c (unless otherwise specified) ns symbol parameter typ. max. units e as single pulse avalanche energy ? CCC 460 mj i ar avalanche current ? CCC 30 a avalanche characteristics s d g diode characteristics 110 ? 440 a symbol parameter min. typ. max. units conditions g fs forward transconductance 53 CCC CCC s v ds = 16v, i d = 30a q g total gate charge CCC 29 44 i d = 15a q gs gate-to-source charge CCC 7.3 CCC nc v ds = 10v q gd gate-to-drain ("miller") charge CCC 8.9 CCC v gs = 4.5v ? q oss output gate charge CCC 33 CCC v gs = 0v, v ds = 10v t d(on) turn-on delay time CCC 12 CCC v dd = 10v t r rise time CCC 220 CCC i d = 30a t d(off) turn-off delay time CCC 17 CCC r g = 1.8 w t f fall time CCC 12 CCC v gs = 4.5v ? c iss input capacitance CCC 2980 CCC v gs = 0v c oss output capacitance CCC 1770 CCC pf v ds = 10v c rss reverse transfer capacitance CCC 280 CCC ? = 1.0mhz v sd diode forward voltage parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.022 CCC v/c reference to 25c, i d = 1ma CCC 5.2 6.5 v gs = 10v, i d = 15a ? CCC 6.7 8.5 v gs = 4.5v, i d = 12a ? v gs(th) gate threshold voltage 1.0 CCC 3.0 v v ds = v gs , i d = 250a CCC CCC 20 a v ds = 16v, v gs = 0v CCC CCC 100 v ds = 16v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 200 v gs = 16v gate-to-source reverse leakage CCC CCC -200 na v gs = -16v static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current r ds(on) static drain-to-source on-resistance m w
irfr/u3711 www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 10 100 1000 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 10v 4.5v 3.7v 3.5v 3.3v 3.0v 2.7v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 2.7v 10 100 1000 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 110a
irfr/u3711 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 10 20 30 40 50 0 2 4 6 8 10 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 30a v = 10v ds v = 16v ds 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.1 1 10 100 1000 0.2 0.8 1.4 2.0 2.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 v ds , drain-tosource voltage (v) 1 10 100 1000 10000 i d , drain-to-source current (a) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
irfr/u3711 www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. v gs + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 20 40 60 80 100 120 t , case temperature ( c) i , drain current (a) c d limited by package
irfr/u3711 6 www.irf.com 25 50 75 100 125 150 0 200 400 600 800 1000 1200 1400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 13a 19a 30a q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - v gs fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v
irfr/u3711 www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
irfr/u3711 8 www.irf.com d-pak (to-252aa) package outline dimensions are shown in millimeters (inches) d-pak (to-252aa) part marking information 6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) m in . 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - s o u r c e 4 - d r a in 10.42 (.410) 9.40 (.370) notes: 1 d imension ing & tolerancin g per ansi y 14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r m s t o je d e c o u t lin e t o -252 a a . 4 dimensions show n are before solder dip, sold er d ip max. +0.16 (.006).
irfr/u3711 www.irf.com 9 i-pak (to-251aa) package outline dimensions are shown in millimeters (inches) i-pak (to-251aa) part marking information 6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010 ) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - source 4 - d r a in notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r ms to je d e c o u t lin e to -25 2a a . 4 d im e n s io n s s h o w n a r e b e f o r e s o l d e r d ip , solder dip max. +0.16 (.006). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018)
irfr/u3711 10 www.irf.com d-pak (to-252aa) tape & reel information dimensions are shown in millimeters (inches) tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 1/01 ? repetitive rating; pulse width limited by max. junction temperature. notes: ? starting t j = 25c, l = 1.0mh r g = 25 w , i as = 30a. ? pulse width 400s; duty cycle 2%. ? calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a. ? when mounted on 1" square pcb (fr-4 or g-10 material) . for recommended footprint and soldering techniques refer to application note #an-994
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